Carbon electronics (diamond, graphene, etc.)

　１．Novel optical devices using diamond/graphene junctions

　Due to their superior electronic properties, there have been many research
on diamond and graphene toward fabrication of high performance devices. Recently,
interfaces between diamond and graphene (carbon sp³-sp²) interfaces, have obtained
considerable interest because the interfaces become sources of various interesting
electronic and physical phenomena.
　We have been trying developing novel optoelectronic devices (AI electronic devices)
using superior properties of diamond/graphene (C sp³-sp²) interfaces.

　・Image (letter) recognition using diamond/graphene junctions

　・Brain-mimic optoelectronic properties of diamond／graphene (carbon sp³-sp²) junctions
　　　（This contents were published in Carbon (Impact factor:11.307)
　　　　　Press released on 2 August; also appeared in EurekAlert, Phys.org, etc.

　・Image recognition (number recognition) using diamond/graphene (C sp³-sp²) physical reservoirs.
　・Multi-bit optoelectronic devices using diamond／graphene junctions
　・Large photoconductivity change in diamond／graphene junctions


　２．Development of high performance diamond power devices

　Diamond is wide band gap semiconductors (Eg of 〜5.5 eV), and it is expected to have
high potential as high power devices because it has superior electronic properties
such as high thermal conductivity, high break down voltage, high movility, etc.
　We have been developing high perfomance power devices using diamond semiconductors.

　・High temperature power devices using diamond semiconductors
　・High-frequency devices using diamond semiconductors


　３．Diamond spin devices

　Spin transitors are logic devices with nonvolatile memory functions. They have
both functions of ferromagnetic materials, which have nonvolatile memory functions,
and transistors, which have high performance logic functions. Ultra low-power consumption
computers can be fabricated if non-volatile logic circuits are realized by developing spin transistors.
　We have been trying fabricating diamond spin transistors by combining ferromagnetic materials
with diamond semiconductors, which is also an ideal host for spin transport because it is expected
to have a long spin diffusion length due to its low spin-orbit interactions

　・Fabrication of novel spin devices using ferromagnets／diamond heterojunctions

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