Diamond is a promising semiconductor for high-power devices using in harsh environment
(high-temperature, etc.). This is because it has excellent physical properties such as
wide band-gap (5.5 eV), high thermal conductivity, high electric breakdown field, and so on.
We have been developing novel, high performance power devices using diamond semiconductors.
・Development of high temperature diamond devices
We have been developing diamond power devices working at higher temperature. We have been
succeeded in fabricating Schottky diodes working well above 〜750°C by using diamond semiconductors.
(Ref. K. Ueda et al., Dia. Relat. Mater., 38 (2013) 41)
・Development of high temperature and power diamond devives
Cu Schottky diodes showed clear rectification up to ~700°C and superior high-temperature stability at 400°C.
The diodes showed specific on-resistance and breakdown voltage of 83.4 m?cm2 and 713 V at 400°C, respectively,
which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit
for 6H-SiC at several hundred °C.
These results indicate Cu/diamond Schottky diodes are promising for high-temperature power applications.
(Ref.: K. Ueda et al., Dia. Relat. Mater. 57 (2015) 28.)