・Mar. 1996 Master of Science, Osaka University
・Mar. 1996 - Jan. 1997 Toshiba Company, researcher
・Mar. 2000 Dr. of Science, Osaka University
・Apr. 2000 - Jan. 2001
ISIR-sanken, Osaka-University, post doctoral fellow
・Feb. 2001 - Mar. 2009
NTT Basic Research Laboratories, researcher
・Apr. 2009 - Mar. 2021
Graduate school of engineering, Nagoya-Univ,
Assoc Professor
(Mar.-Aug. 2011 Invited researcher;
Neel Institut, CNRS, France)
・April 2022 -
Graduate school of IPS, Waseda University
Professor
1. Carbon electronics (diamond, graphene) (2005-)
2. Topological materials and devices (2018-)
3. Heusler spintronics (2010-)
4. Oxide electronics (2009-2018)
5. Superconducting properties of MgB2 films (2001-2005)
6. Magnetic and electronic properties of oxides (1997-2001)
Functional thin films laboratory
Graduate school of information, production and systems
Waseda University
Kenji Ueda /k-ueda[AT]waseda.jp (please swap [AT] with @)
1. Optoelectronic synapses using vertically aligned graphene/diamond heterojunctions
Y. Mizuno, Y. Ito, and K. Ueda, Carbon, 182 (2021) 669-676.
(Press release (21.7.2))
(Appeared in 電波新聞(DEMPA DIGITAL)(7/9)、マイナビニュースTECH+(7/6),
つくばサイエンスニュース, わかる科学 (8/15))
2. Multibit optoelectronic memory using graphene/diamond (carbon sp2-sp3) heterojunctions
and its arithmetic functions
K. Ueda, Y. Mizuno, and H. Asano.
Appl. Phys. Lett., 117 (2020) 092103-1-5.
3. Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy
K. Ueda, Y. Hadate, K. Suzuki, and H. Asano
Thin Solid Films, 713 (2020) 138361-1-8.
4. Ambipolar transport in Mn2CoAl by ionic liquid gating
K. Ueda, S. Hirose, and H. Asano
Appl. Phys. Lett., 110 (2017) 202405-1-4.
5. Ferromagnetic Schottky junctions using half-metallic Co2MnSi/diamond heterostructures
K. Ueda, T. Soumiya, M. Nishiwaki, H. Asano
Appl. Phys. Lett. 103 (2013) 052408-1-4.